The goal of the Contrails project is to help preserve and disseminate the technical record of 20th century aerospace research, highlighting in particular the research endeavors of the Illinois Tech community.

Properties of Sulfide Semiconductors

Report Number: AFOSR-TR-59-4
Corporate Author: Illinois Inst. of Tech. Armour Research Foundation
Date of Publication: 1959-02
Pages: 18
Contract: AF 49(638)112
PB Number: PB138738
AD Number: AD0208757
Original AD Number: AD 208757

The fabrication of metal-sulfide type semiconductors and their properties were studied; emphasis was placed on As2Te3 and Sb2Se3. An As2Te3 sample with an impurity of 1.9% Sb showed a Hall mobility of 6650 sq cm/volt-sec with a relativity of 5.53 x 10^-4 ohm-cm and carrier destiny of 0.17x10^19 at room temperature. The mobility value is more than an order of magnitude larger than that of any other sample studied. Samples of As2Te3 and Sb2Se3 were characterized by measuring sample resistivity as a function of temperature up to 300 degrees C, together with Hall effect measurements at room temperature. The results indicated that (1) from 71 degrees to 258 degrees C the variation of carrier concentration with temperature is insignificant compared to the change of carrier mobility, and (2) the observed increase of sample resistivity with increasing temperature is mainly due to decreasing carrier mobility caused by lattice scattering of the charge carrier. Specimen resistivity values vs temperature data indicated that temperatures sufficiently high for intrinsic activation energy calculations were not reached.

This citation is provided as a resource for researchers, but Contrails cannot provide a full-image download

U.S. government employees, Military/Department of Defense employees, and U.S. government contractors and sub-contractors may be eligible to register with the Defense Technical Information Center (DTIC), where this report and others like it may be available

Other options for obtaining this report

Via the Defense Technical Information Center (DTIC):
This report is not publicly available via DTIC

Via National Technical Information Service:
This report is unlikely to be available in the National Technical Reports Library

Indications of Public Availability
A PB Number, PB138738 , exists for this report, indicating public availability of the report at time of publication

No digital image of an index entry indicating public availability is currently available
There has been no verification of an indication of public availability from an inside cover statement