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Thermal Properties Of Refractory Materials

Report Number: WADD TR 60-581 Part II
Author: Cape, J. A.
Author: Taylor, R. E.
Corporate Author: Atomics International, Canoga Park, Calif.
Laboratory: Directotare of Materials and Processes
Date of Publication: 1962-06
Pages: 28
Contract: AF 33(616)-6794
Project: 4776
AD Number: AD0264228

Abstract:
Refinements in the transient thermal property apparatus are described. With these modifications, the apparatus has been used to determine the thermal diffusivity of tungsten boride from about 1300°C to 1600°C. The measured values increase from about 0.054 to 0.058 over this temperature interval.

The techniques and apparatus for measuring the specific heat of brittle conductors by pulse heating are also described. Resistivity and specific heat data for uranium silicide of several compositions are reported. The resistivity and specific heat increased with increasing silicon content. For uranium silicide containing 3.8% silicon, the resistivity increased from 56 micro-ohm-cm at 0°C to 75 micro-ohm-cm at 750°C, and for uranium silicide containing 5.9% silicon, the resistivity increased from 81 micro-ohm-cm at 0°C to 111 micro-ohm-cm at 800°C. The specific heat for the 3.8% silicon material is given by Cp = 3.16 x 10-6T + 0.0412 cal/gm-°C from 50° to 430°C, and for the 5.8% silicon material, Cp = 16.1 x 10-6T + 0.0455 cal/gm- °C from 50° to 715°C, where T is in °C.

The thermal conductivity of titanium carbide was measured over the temperature region 400° to 1200°C. the steady-state radial heat flow method was used. The conductivity varies linearly from 0.088 ca/sec-cm-°C at 500°C to 0.109 cal/sec-cm-°C at 1100°C. These results are in marked contrast to values reported in the literature.


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